国家/地区 Usa（7）
关键词 CUTOFF FREQUENCY（2） NANOELECTRONIC（2）
出版物 NANO LETTERS（2） PROCEEDINGS OF THE .（2）
出版时间 2010（5） 2012（2）
机构 UNIV CALIF LOS ANGELES（7）
作者 LIN YC（7）

High-frequency self-aligned graphene transistors with transferred gate stacks

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

CHENG R, BAI JW, LIAO L, ZHOU HL, CHEN Y, LIU LX, LIN YC, JIANG S, HUANG Y, DUAN XF

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene

JOURNAL OF MATERIALS CHEMISTRY

LIU LX, ZHOU HL, CHENG R, CHEN Y, LIN YC, QU YQ, BAI JW, IVANOV IA, LIU G, HUANG Y, DUAN XF

Sub-100 nm Channel Length Graphene Transistors

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, QU YQ, HUANG Y, DUAN XF

High-speed graphene transistors with a self-aligned nanowire gate

NATURE

LIAO L, LIN YC, BAO MQ, CHENG R, BAI JW, LIU YA, QU YQ, WANG KL, HUANG Y, DUAN XF

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

ADVANCED MATERIALS

LIAO L, BAI JW, LIN YC, QU YQ, HUANG Y, DUAN XF

Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, HUANG Y, DUAN XF

High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

LIAO L, BAI JW, QU YQ, LIN YC, LI YJ, HUANG Y, DUAN XF