国家/地区 China（4）
关键词
出版物
出版时间 2012（2）
机构 UNIV ELECT SCI TECHNOL CHINA（4）
作者 XU RM（4）

Flexible Graphene Field-Effect Transistors With Extrinsic f(max) of 28

IEEE ELECTRON DEVICE LETTERS

LAN Y, XU YH, WU Y, CAO ZY, CHEN TS, ZHOU JH, WU YQ, CHEN YF, YAN B, XU RM, LI YR

Microwave transmission properties of chemical vapor deposition graphene

APPLIED PHYSICS LETTERS

WU YQ, XU YH, WANG ZG, XU C, TANG ZX, CHEN YF, XU RM

Electrical read out of nano-electromechanical system signal by using graphene resonant channel transistor

ACTA PHYSICA SINICA

XU YH, GUO YC, WU YQ, XU RM, YAN B

A High-Frequency Compact Model for Graphene Resonant Channel Transistors Including Mechanical Nonlinear Effects

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

MEI TD, XU YH, LAN Y, LI OP, SARDER MR, XU RM, LI YR