国家/地区 England（6）
关键词 GRAPHENE（4） HETEROSTRUCTURE（4） PHOTODETECTOR（4）
WS2（4） SURFACE TRANSFER DO.（2）
出版物 ACS APPLIED MATERIA.（2） ACS NANO（2）
出版时间 2016（2） 2018（2）
机构 UNIV OXFORD（6）
作者 TAN HJ（6）

Utilizing Interlayer Excitons in Bilayer WS2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors

ACS NANO

ZHOU YQ, TAN HJ, SHENG YW, FAN Y, XU WS, WARNER JH

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics

ACS APPLIED MATERIALS INTERFACES

CHANG RJ, TAN HJ, WANG XC, PORTER B, CHEN TX, SHENG YW, ZHOU YQ, HUANG HF, BHASKARAN H, WARNER JH

Crack-Free Growth and Transfer of Continuous Monolayer Graphene Grown on Melted Copper

CHEMISTRY OF MATERIALS

FAN Y, HE K, TAN HJ, SPELLER S, WARNER JH

Lateral Graphene-Contacted Vertically Stacked WS2/MoS2 Hybrid Photodetectors with Large Gain

ADVANCED MATERIALS

TAN HJ, XU WS, SHENG YW, LAU CS, FAN Y, CHEN Q, TWEEDIE M, WANG XC, ZHOU YQ, WARNER JH

Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes

ACS NANO

TAN HJ, FAN Y, ZHOU YQ, CHEN Q, XU WS, WARNER JH

Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition

ACS APPLIED MATERIALS INTERFACES

TAN HJ, FAN Y, RONG YM, PORTER B, LAU CS, ZHOU YQ, HE ZY, WANG SS, BHASKARAN H, WARNER JH