国家/地区 Japan（9）
关键词 ELECTRONIC STRUCTUR.（2） FET（2）
出版物 APPLIED PHYSICS EXPRESS（9）
出版时间 2017（3） 2020（2）
机构 UNIV TSUKUBA（9）
作者 OKADA S（9）

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

APPLIED PHYSICS EXPRESS

GAO YL, MARUYAMA M, OKADA S

Energetics and formation mechanism of borders between hexagonal boron nitride and graphene

APPLIED PHYSICS EXPRESS

SAWAHATA H, YAMANAKA A, MARUYAMA M, OKADA S

Electron injection into nearly free electron states of graphene nanoribbons under a lateral electric field

APPLIED PHYSICS EXPRESS

YAMANAKA A, OKADA S

High-Efficiency Photoelectric Conversion in Graphene-Diamond Hybrid Structures: Model and First-Principles Calculations

APPLIED PHYSICS EXPRESS

KONABE S, CUONG NT, OTANI M, OKADA S

Strain-induced charge transfer and polarity control of a heterosheet comprising C-60 and graphene

APPLIED PHYSICS EXPRESS

SAUCIER YA, OKADA S, MARUYAMA M

Electrostatic potential barrier for electron emission at graphene edges induced by the nearly free electron states

APPLIED PHYSICS EXPRESS

GAO YL, OKADA S

Effect of charged metal nanoparticles on carrier injection in graphene by an external electric field

APPLIED PHYSICS EXPRESS

MATSUBARA M, OKADA S

Electronic structure modulation of graphene edges by chemical functionalization

APPLIED PHYSICS EXPRESS

TAIRA R, YAMANAKA A, OKADA S