国家/地区 Iran（4）
关键词 BAND STRUCTURE（2） ELASTIC CONSTANT（2） GRAPHENE（2）
GRAPHENE/MOS2 HETER.（2） MOLYBDENUM DISULFID.（2） NORMAL COMPRESSIVE .（2）
SCHOTTKY BARRIER（2）
出版物
出版时间
机构 UNIV ZANJAN（4）
作者 GHOBADI N（4）

Band structure and Schottky barrier modulation in multilayer black phosphorene and black phosphorene/graphene heterostructure through out-of-plane strain

PHYSICA BCONDENSED MATTER

SHAMEKHI M, GHOBADI N

Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

GHOBADI N

A comparative study of the mechanical properties of multilayer MoS2 and graphene/MoS2 heterostructure: effects of temperature, number of layers and stacking order

CURRENT APPLIED PHYSICS

GHOBADI N

Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing

IEEE ELECTRON DEVICE LETTERS

GHOBADI N, POURFATH M