国家/地区 | India(4) |
关键词 | GRAPHENE OXIDE(2) |
出版物 | |
出版时间 | 2019(4) |
机构 | VISVESVARAYA NATL INST TECHNOL(4) |
作者 |
Modeling and computation of double drift region transit time diode performance based on graphene-SiC
INTERNATIONAL JOURNAL OF NUMERICAL MODELLINGELECTRONIC NETWORKS DEVICES FIELDS
GHIVELA GC, SENGUPTA J
MATERIALS RESEARCH EXPRESS
GEDAM SS, CHAUDHARY AK, VIJAYAKUMAR RP, GOSWAMI AK, BAJAD GS, PAL D
RESEARCH ON CHEMICAL INTERMEDIATES
DAS RS, WARKHADE SK, KUMAR A, WANKHADE AV
JOURNAL OF HAZARDOUS MATERIALS
BANDI S, RAVURI S, PESHWE DR, SRIVASTAV AK