国家/地区 China（2）
关键词
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（3）
出版时间
机构 ZHENGZHOU UNIV（3）
作者 JIA Y（2）

Spin-gapless and -gapped band structures of non-compensated bonding BN/Graphene bilayer

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HAO DF, HAN XY, ZI YB, LI C, NIU CY, WANG F, CHO JH, JIA Y

3D cross-linking N-doped graphene framework for high sulfur nanocrystal storage

JOURNAL OF PHYSICS DAPPLIED PHYSICS

QIAN BB, LIU CD, XU JM, SUN QQ, YANG HG, LIU WT, ZHANG L, MINARI T, LIU XY, CHEN JZ

Half-metal behaviour mediated by self-doping of topological line defect combining with adsorption of 3d transition-metal atomic chains in graphene

JOURNAL OF PHYSICS DAPPLIED PHYSICS

ZHU ZL, CHEN WG, SUN Q, JIA Y