国家/地区 China（4） India（3）
关键词 ENERGY DENSITY（8）
出版物 ACS APPLIED MATERIALS INTERFACES（8）
出版时间 2015（2） 2018（2）
机构
作者 GHOSH D（2）

Fused Heterocyclic Molecule-Functionalized N-Doped Reduced Graphene Oxide by Non-Covalent Bonds for High-Performance Supercapacitors

ACS APPLIED MATERIALS INTERFACES

XU LM, ZHANG YY, ZHOU WQ, JIANG FX, ZHANG H, JIANG QL, JIA YH, WANG R, LIANG AQ, XU JK, DUAN XM

Graphene/Boron Nitride-Polyurethane Microlaminates for Exceptional Dielectric Properties and High Energy Densities

ACS APPLIED MATERIALS INTERFACES

WU Y, WANG ZY, SHEN X, LIU X, HAN NM, ZHENG QB, MA YW, KIM JK

Enhancing Electrochemical Performance of Graphene Fiber-Based Supercapacitors by Plasma Treatment

ACS APPLIED MATERIALS INTERFACES

MENG J, NIE WQ, ZHANG K, XU FJ, DING X, WANG SR, QIU YP

An Approach To Fabricate PDMS Encapsulated All-Solid-State Advanced Asymmetric Supercapacitor Device with Vertically Aligned Hierarchical Zn-Fe-Co Ternary Oxide Nanowire and Nitrogen Doped Graphene Nanosheet for High Power Device Applications

ACS APPLIED MATERIALS INTERFACES

MAITRA A, DAS AK, BERA R, KARAN SK, PARIA S, SI SK, KHATUA BB

High Energy Density All Solid State Asymmetric Pseudocapacitors Based on Free Standing Reduced Graphene Oxide-Co3O4 Composite Aerogel Electrodes

ACS APPLIED MATERIALS INTERFACES

GHOSH D, LIM J, NARAYAN R, KIM SO

Band Gap Engineering of Boron Nitride by Graphene and Its Application as Positive Electrode Material in Asymmetric Supercapacitor Device

ACS APPLIED MATERIALS INTERFACES

SAHA S, JANA M, KHANRA P, SAMANTA P, KOO H, MURMU NC, KUILA T

Hydrothermal Growth of Hierarchical Ni3S2 and Co3S4 on a Reduced Graphene Oxide Hydrogel@Ni Foam: A High-Energy-Density Aqueous Asymmetric Supercapacitor

ACS APPLIED MATERIALS INTERFACES

GHOSH D, DAS CK

Concurrently Achieving High Discharged Energy Density and Efficiency in Composites by Introducing Ultralow Loadings of Core-Shell Structured Graphene@TiO2 Nanoboxes

ACS APPLIED MATERIALS INTERFACES

SUN L, SHI ZC, LIANG L, DONG JF, PAN ZZ, WANG HL, GAO Z, QIN Y, FAN RH, WANG H