国家/地区 China（3） Korea（3）
关键词 GAN（8）
出版物 ACS APPLIED MATERIALS INTERFACES（8）
出版时间 2018（2）
机构 CHONBUK NATL.（3） SHANDONG UNI.（2）
作者 CHOI I（2） HAN S（2） HAO XP（2） JEONG KU（2）
KIM JS（2） LEE CR（2） LEE SK（2） SHAO YL（2）
WU YZ（2）

Fast Response Characteristics of Flexible Ultraviolet Photosensors with GaN Nanowires and Graphene

ACS APPLIED MATERIALS INTERFACES

HAN S, CHOI I, LEE CR, JEONG KU, LEE SK, KIM JS

Highly Efficient and Flexible Photosensors with GaN Nanowires Horizontally Embedded in a Graphene Sandwich Channel

ACS APPLIED MATERIALS INTERFACES

HAN S, LEE SK, CHOI I, SONG J, LEE CR, KIM K, RYU MY, JEONG KU, KIM JS

Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene

ACS APPLIED MATERIALS INTERFACES

JOURNOT T, BOUCHIAT V, GAYRAL B, DIJON J, HYOT B

Fabrication and Characteristics of GaN-Based Light-Emitting Diodes with a Reduced Graphene Oxide Current-Spreading Layer

ACS APPLIED MATERIALS INTERFACES

RYU BD, HAN M, HAN N, PARK YJ, KO KB, LIM TH, CHANDRAMOHAN S, CUONG TV, CHOI CJ, CHO J, HONG CH

Graphene-Oxide-Assisted Synthesis of GaN Nanosheets as a New Anode Material for Lithium-Ion Battery

ACS APPLIED MATERIALS INTERFACES

SUN CL, YANG MZ, WANG TL, SHAO YL, WU YZ, HAO XP

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode

ACS APPLIED MATERIALS INTERFACES

KUMAR A, KASHID R, GHOSH A, KUMAR V, SINGH R

Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitride Nanosheets Substrate

ACS APPLIED MATERIALS INTERFACES

ZHANG L, LI XL, SHAO YL, YU JX, WU YZ, HAO XP, YIN ZM, DAI YB, TIAN Y, HUO Q, SHEN YA, HUA Z, ZHANG BG

Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene

ACS APPLIED MATERIALS INTERFACES

QU YP, XU Y, CAO B, WANG YN, WANG JF, SHI L, XU K