国家/地区
关键词 FIELD EFFECT TRANSISTOR（3）
出版物 ACS NANO（3）
出版时间 2012（3）
机构
作者

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Si-Compatible Cleaning Process for Graphene Using Low-Density Inductively Coupled Plasma

ACS NANO

LIM YD, LEE DY, SHEN TZ, RA CH, CHOI JY, YOO WJ

The Application of Highly Doped Single-Layer Graphene as the Top Electrodes of Semitransparent Organic Solar Cells

ACS NANO

LIU ZK, LI JH, SUN ZH, TAI GA, LAU SP, YAN F