国家/地区 China（2）
关键词 DOPING（2）
出版物 ADVANCED ELECTRONIC MATERIALS（2）
出版时间
机构
作者

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

Illumination-Induced Hole Doping for Performance Improvement of Graphene/n-Silicon Solar Cells with P3HT Interlayer

ADVANCED ELECTRONIC MATERIALS

XU DK, HE J, YU XG, GAO DC, MA LL, MU XH, ZHONG MY, XU Y, YE JC, XU MS, YANG DR