国家/地区 China（3）
关键词
出版物 AIP ADVANCES（3）
出版时间
机构 FUDAN UNIV（3）
作者

Improved contact resistivity and enhanced mobility of metal-graphene FET by inserting ultra-thin MoOx layer at source/drain region

AIP ADVANCES

ZHANG Y, QU XP

Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

AIP ADVANCES

LI YJ, SUN QQ, CHEN L, ZHOU P, WANG PF, DING SJ, ZHANG DW

Conductivity of graphene affected by metal adatoms

AIP ADVANCES

ZHANG P, LI JT, MENG JW, JIANG AQ, ZHUANG J, NING XJ