国家/地区 Japan（4）
关键词 ELECTRONIC STRUCTUR.（2） FET（2）
出版物 APPLIED PHYSICS EXPRESS（4）
出版时间 2020（2）
机构 UNIV TSUKUBA（4）
作者 MARUYAMA M（4）

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

APPLIED PHYSICS EXPRESS

GAO YL, MARUYAMA M, OKADA S

Energetics and formation mechanism of borders between hexagonal boron nitride and graphene

APPLIED PHYSICS EXPRESS

SAWAHATA H, YAMANAKA A, MARUYAMA M, OKADA S

Strain-induced charge transfer and polarity control of a heterosheet comprising C-60 and graphene

APPLIED PHYSICS EXPRESS

SAUCIER YA, OKADA S, MARUYAMA M