国家/地区 Japan（4）
关键词
出版物 APPLIED PHYSICS EXPRESS（4）
出版时间
机构 FUJITSU LABS.（3）
作者 SATO S（4）

Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

APPLIED PHYSICS EXPRESS

NAKAHARAI S, IIJIMA T, OGAWA S, MIYAZAKI H, LI S, TSUKAGOSHI K, SATO S, YOKOYAMA N

Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes

APPLIED PHYSICS EXPRESS

KONDO D, SATO S, YAGI K, HARADA N, SATO M, NIHEI M, YOKOYAMA N

Self-organization of novel carbon composite structure: Graphene multi-layers combined perpendicularly with aligned carbon nanotubes

APPLIED PHYSICS EXPRESS

KONDO D, SATO S, AWANO Y

Theoretical study on high-frequency graphene-nanoribbon heterojunction backward diode

APPLIED PHYSICS EXPRESS

HARADA N, JIPPO H, SATO S