国家/地区 China（6）
关键词
出版物 CARBON（6）
出版时间 2017（2） 2021（2）
机构 XI AN JIAO T.（4）
作者 HU TW（6）

Bismuth mediated defect engineering of epitaxial graphene on SiC(0001)

CARBON

HU TW, MA DY, FANG QL, ZHANG P, LIU XT, WEI R, PAN Y, XU KW, MA F

Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature (vol 120, pg 219, 2017)

CARBON

HU TW, BAO HW, LIU S, LIU XT, MA DY, MA F, XU KW

Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature

CARBON

HU TW, BAO HW, LIU S, LIU XT, MA DY, MA F, XU KW

Substitutional doping of Ag into epitaxial graphene on 6H-SiC substrates during thermal decomposition

CARBON

LIU XT, HU TW, MIAO YP, MA DY, YANG Z, MA F, XU KW, CHU PK

Atomic structure and electronic properties of the intercalated Pb atoms underneath a graphene layer

CARBON

HU TW, YANG D, GAO HT, LI Y, LIU XT, XU KW, XIA QF, MA F

The structure and mechanism of large-scale indium-intercalated graphene transferred from SiC buffer layer

CARBON

HU TW, YANG D, HU W, XIA QF, MA F, XU KW