国家/地区 China（4）
关键词
出版物 CHINESE PHYSICS LETTERS（4）
出版时间
机构 HEBEI SEMICO.（2）
作者 FENG ZH（4）

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH

Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

CHINESE PHYSICS LETTERS

PAN HL, JIN Z, MA P, GUO JN, LIU XY, YE TC, LI J, DUN SB, FENG ZH

Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates

CHINESE PHYSICS LETTERS

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, SONG XB, HAN TT, FENG ZH, CAI SJ

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

CHINESE PHYSICS LETTERS

HE ZZ, YANG KW, YU C, LI J, LIU QB, LU WL, FENG ZH, CAI SJ