国家/地区
关键词 SILICON（2）
出版物 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2）
出版时间
机构
作者

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Graphene-Silicon Diode for 2-D Heterostructure Electrical Failure Protection

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ANWAR MA, ALI M, PU D, BODEPUDI SC, LV JH, SHEHZAD K, WANG XC, IMRAN A, ZHAO Y, DONG SR, HU H, YU B, XU Y