国家/地区 |
India(2)![]() |
关键词 |
GRAPHENE(2)![]() |
出版物 |
IEEE TRANSACTIONS ON ELECTRON DEVICES(2)![]() |
出版时间 |
2021(2)![]() |
机构 | |
作者 |
IEEE TRANSACTIONS ON ELECTRON DEVICES
SINDHU B, KOTHURU A, SAHATIYA P, GOEL S, NANDI S
Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap
IEEE TRANSACTIONS ON ELECTRON DEVICES
CHANDRASEKAR L, PRADHAN KP