国家/地区 Iran（2）
关键词 TUNNELING TRANSISTOR（3）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间
机构
作者 POURFATH M（2）

A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures

IEEE TRANSACTIONS ON ELECTRON DEVICES

GHOBADI N, POURFATH M

Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

IEEE TRANSACTIONS ON ELECTRON DEVICES

DA HX, LAM KT, SAMUDRA G, CHIN SK, LIANG GC

Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure

IEEE TRANSACTIONS ON ELECTRON DEVICES

HORRI A, FAEZ R, POURFATH M, DARVISH G