| 国家/地区 |
India(2)
|
| 关键词 |
GRAPHENE(2)
|
| 出版物 |
IEEE TRANSACTIONS ON ELECTRON DEVICES(2)
|
| 出版时间 |
2021(2)
|
| 机构 | |
| 作者 |
IEEE TRANSACTIONS ON ELECTRON DEVICES
SINDHU B, KOTHURU A, SAHATIYA P, GOEL S, NANDI S
Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap
IEEE TRANSACTIONS ON ELECTRON DEVICES
CHANDRASEKAR L, PRADHAN KP
