国家/地区
关键词 FIELDEFFECT TRANSISTOR FET（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（2）
出版时间 2020（2）
机构
作者

A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor With NH3 Sensing Application

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHOURASIA NK, SINGH AK, RAI S, SHARMA A, CHAKRABARTI P, SRIVASTAVA A, PAL BN

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D