国家/地区 | |
关键词 | LOGIC GATE(3) |
出版物 | IEEE TRANSACTIONS ON ELECTRON DEVICES(3) |
出版时间 | 2021(3) |
机构 | |
作者 |
IEEE TRANSACTIONS ON ELECTRON DEVICES
JEPPSON K, ASAD M, STAKE J
IEEE TRANSACTIONS ON ELECTRON DEVICES
YE SZ, WANG ZF, WANG H, HUANG QJ, HE J, CHANG S
Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap
IEEE TRANSACTIONS ON ELECTRON DEVICES
CHANDRASEKAR L, PRADHAN KP