国家/地区 Vietnam（5）
关键词 BILAYER GRAPHENE（2） EXCHANGECORRELATION（2） PLASMON（2）
出版物 INTERNATIONAL JOURNAL OF MODERN PHYSICS B（5）
出版时间 2018（2） 2020（2）
机构 AN GIANG UNI.（2） TON DUC THAN.（2）
作者 KHANH NQ（2） LINH DK（2） MEN NV（2） PHUONG DTK（2）

Charged impurity scattering in bilayer-graphene double layers

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

LINH DK, KHANH NQ

Graphene band engineering for resistive random-access memory application

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

KOOHZADI P, AHMADI MT, KARAMDEL J, NGUYEN TK

Plasmon modes in graphene - GaAs heterostructures at finite temperature

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

MEN NV, PHUONG DTK

Plasmon modes in bilayer-graphene-GaAs heterostructures including layer-thickness and exchange-correlation effects

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

MEN NV, PHUONG DTK

Transport properties of bilayer graphene due to charged impurity scattering: Temperature-dependent screening and substrate effects

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

LINH DK, KHANH NQ