国家/地区
关键词 RRAM（2）
出版物 INTERNATIONAL JOURNAL OF NANOTECHNOLOGY（2）
出版时间
机构
作者

Retention behaviour of graphene oxide resistive switching memory

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

YUAN F, YE YR, LAI CS, WANG JC, ZHANG ZG, PAN LY, XU J

Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for resistive switching memory applications

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

WU Q, CLARAMUNT S, PORTI M, NAFRIA M, AYMERICH X