国家/地区 Japan（4）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（4）
出版时间 2011（4）
机构 NTT CORP（4）
作者 HIBINO H（4）

Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface

JAPANESE JOURNAL OF APPLIED PHYSICS

KAGESHIMA H, HIBINO H, YAMAGUCHI H, NAGASE M

Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices

JAPANESE JOURNAL OF APPLIED PHYSICS

KAGESHIMA H, HIBINO H, NAGASE M, SEKINE Y, YAMAGUCHI H

Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition

JAPANESE JOURNAL OF APPLIED PHYSICS

MAEDA F, HIBINO H

Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

TANABE S, SEKINE Y, KAGESHIMA H, NAGASE M, HIBINO H