国家/地区 France（7） Vietnam（3）
关键词 GRAPHENE（2） NANOSTRUCTURED MATE.（2）
出版物 JOURNAL OF APPLIED PHYSICS（10）
出版时间 2011（3） 2009（2） 2010（2）
机构 UNIV PARIS 1.（5） HANOI ADV SC.（2）
作者 DOLLFUS P（10）

Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, NGUYEN MC, NGUYEN HV, DOLLFUS P

Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, BOURNEL A, DOLLFUS P

Spin-polarized current and tunneling magnetoresistance in ferromagnetic gate bilayer graphene structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, BOURNEL A, DOLLFUS P

Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study

JOURNAL OF APPLIED PHYSICS

MAZZAMUTO F, SAINTMARTIN J, VALENTIN A, CHASSAT C, DOLLFUS P

Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures (vol 106, 023719, 2009)

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Negative differential resistance in zigzag-edge graphene nanoribbon junctions

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Controllable spin-dependent transport in armchair graphene nanoribbon structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, DO VN, BOURNEL A, NGUYEN VL, DOLLFUS P

Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures

JOURNAL OF APPLIED PHYSICS

DO VN, NGUYEN VH, DOLLFUS P, BOURNEL A

Strong negative differential conductance in strained graphene devices

JOURNAL OF APPLIED PHYSICS

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P