国家/地区 England（2）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（2）
出版时间
机构 NEWCASTLE UN.（2）
作者 HOPF T（2）

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

JOURNAL OF APPLIED PHYSICS

HOPF T, VASSILEVSKI KV, ESCOBEDOCOUSIN E, KING PJ, WRIGHT NG, O NEILL AG, HORSFALL AB, GOSS JP, WELLS GH, HUNT MRC

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

JOURNAL OF APPLIED PHYSICS

ESCOBEDOCOUSIN E, VASSILEVSKI K, HOPF T, WRIGHT N, O NEILL A, HORSFALL A, GOSS J, CUMPSON P