国家/地区 Japan（18）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（18）
出版时间 2015（3） 2008（2） 2009（2） 2011（2） 2013（2） 2014（2）
机构 UNIV AIZU（9） TOHOKU UNIV（7）
作者 RYZHII M（18）

Graphene vertical hot-electron terahertz detectors

JOURNAL OF APPLIED PHYSICS

RYZHII V, SATOU A, OTSUJI T, RYZHII M, MITIN V, SHUR MS

Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII M, RYZHII V, OTSUJI T, MALTSEV PP, LEIMAN VG, RYABOVA N, MITIN V

Double injection in graphene p-i-n structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, SEMENIKHIN I, RYZHII M, SVINTSOV D, VYURKOV V, SATOU A, OTSUJI T

Terahertz photomixing using plasma resonances in double-graphene layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, SHUR MS, SATOU A, OTSUJI T

Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator

JOURNAL OF APPLIED PHYSICS

RYZHII V, OTSUJI T, RYZHII M, LEIMAN VG, YURCHENKO SO, MITIN V, SHUR MS

Toward the creation of terahertz graphene injection laser

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, OTSUJI T

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, MITIN V

Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, OTSUJI T

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, DUBINOV AA, ALESHKIN VY

Device model for graphene bilayer field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, KIROVA N