国家/地区 China（4）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（5）
出版时间
机构 TSINGHUA UNI.（3）
作者 XIE D（5）

Electron-doping of graphene-based devices by hydrazine

JOURNAL OF APPLIED PHYSICS

FENG TT, XIE D, WANG DX, WEN L, WU MQ

Investigation of the improved performance in a graphene/polycrystalline BiFeO3/Pt photovoltaic heterojunction: Experiment, modeling, and application

JOURNAL OF APPLIED PHYSICS

ZANG YY, XIE D, CHEN Y, WU X, REN TL, ZHU HW, CAO JL, PLANT D

Poly (ethylene imine)-modulated transport behaviors of graphene field effect transistors with double Dirac points

JOURNAL OF APPLIED PHYSICS

SUN YL, XIE D, ZHANG C, LI XM, XU JL, SUN MX, TENG CJ, LI X, ZHU HW

Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector

JOURNAL OF APPLIED PHYSICS

ZHU M, LI XM, LI X, ZANG XB, ZHEN Z, XIE D, FANG Y, ZHU HW

HfO2 dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima

JOURNAL OF APPLIED PHYSICS

ZHANG C, XIE D, XU JL, LI XM, SUN YL, DAI RX, LI X, ZHU HW