国家/地区 Japan（11）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（11）
出版时间 2007（2） 2008（2） 2009（2） 2010（2） 2011（2）
机构 UNIV AIZU（11）
作者 OTSUJI T（11） RYZHII V（11） RYZHII M（9） SATOU A（6）
MITIN V（5） DUBINOV AA（2）

Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII M, RYZHII V, OTSUJI T, MALTSEV PP, LEIMAN VG, RYABOVA N, MITIN V

Toward the creation of terahertz graphene injection laser

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, OTSUJI T

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, MITIN V

Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, OTSUJI T

Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides

JOURNAL OF APPLIED PHYSICS

RYZHII V, DUBINOV AA, OTSUJI T, MITIN V, SHUR MS

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, DUBINOV AA, ALESHKIN VY

Device model for graphene bilayer field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, KIROVA N

High-frequency properties of a graphene nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII M, SATOU A, RYZHII V, OTSUJI T

Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T

Negative dynamic conductivity of graphene with optical pumping

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, OTSUJI T