国家/地区 Japan（6）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（6）
出版时间 2008（2） 2009（2）
机构 UNIV AIZU（6）
作者 SATOU A（6）

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, MITIN V

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, DUBINOV AA, ALESHKIN VY

Device model for graphene bilayer field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, KIROVA N

High-frequency properties of a graphene nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII M, SATOU A, RYZHII V, OTSUJI T

Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T

Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures

JOURNAL OF APPLIED PHYSICS

RYZHII V, SATOU A, OTSUJI T