国家/地区 China（3）
关键词 FIELDEFFECT TRANSISTOR（3）
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（3）
出版时间
机构
作者

Stability of radio-frequency graphene field-effect transistors in ambient

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG ZD, ZHANG QP, WEI ZJ, PENG P, TIAN ZZ, REN LM, ZHANG X, HUANG R, WEN JC, FU YY

Improve the transconductance of a graphene field-effect transistor by folding graphene into a wedge

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CAO GM, LIU WH, CAO M, LI X, ZHANG AP, WANG XL, CHEN BD

Effects of Se substitution on the Schottky barrier of a MoS (x) Se(2-x)/graphene heterostructure

JOURNAL OF PHYSICS DAPPLIED PHYSICS

YIN K, HUANG T, WU HY, SI Y, LIAN JC, XIAO YW, ZHANG ZG, HUANG WQ, HU WY, HUANG GF