国家/地区 Germany（2）
关键词
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（2）
出版时间 2010（2）
机构
作者

Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RIEDL C, COLETTI C, STARKE U

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T