国家/地区 Korea（3）
关键词
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（3）
出版时间 2017（3）
机构
作者

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KIM Y, CHO S, KIM H, SEO S, LEE HU, LEE J, KO H, CHANG M, PARK B

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

JOURNAL OF PHYSICS DAPPLIED PHYSICS

REHMAN MM, SIDDIQUI GU, KIM S, CHOI KH

Unique properties of graphene quantum dots and their applications in photonic/electronic devices

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CHOI SH