国家/地区 China（2）
关键词 DOPING（4）
出版物 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING（4）
出版时间
机构
作者

Performance effects of doping engineering on graphene-like C3N as an anode material for alkali metal ion batteries

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

TIAN BW, HUANG TH, GUO JY, SHU HB, WANG Y, DAI J

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

SHTEPLIUK I, IVANOV IG, IAKIMOV T, YAKIMOVA R, KAKANAKOVAGEORGIEVA A, FIORENZA P, GIANNAZZO F

Transport properties of B/P doped graphene nanoribbon field-effect transistor

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

RUI CK, SHAO C, LIU JX, CHEN AQ, ZHU KG, SHAO QY

Comparative analysis of Boron, nitrogen, and phosphorous doping in monolayer of semi-metallic Xenes (Graphene, Silicene, and Germanene)-A first principle calculation based approach

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

TIWARI A, BAHADURSHA N, PALEPU J, CHAKRABORTY S, KANUNGO S