国家/地区
关键词 NONVOLATILE MEMORY DEVICE（2）
出版物 ORGANIC ELECTRONICS（2）
出版时间
机构 HANYANG UNIV（2）
作者 KIM TW（2）

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

ORGANIC ELECTRONICS

KIM YN, LEE NH, YUN DY, KIM TW