国家/地区
关键词 2D MATERIAL（4）
出版物 SEMICONDUCTOR SCIENCE TECHNOLOGY（4）
出版时间 2020（2）
机构
作者

Temperature dependent device characteristics of graphene/h-BN/Si heterojunction

SEMICONDUCTOR SCIENCE TECHNOLOGY

WANG C, BEHURA SK, BERRY V

Fabrication and characterization of Au/n-type InP Schottky barrier diode with monolayer graphene interlayer

SEMICONDUCTOR SCIENCE TECHNOLOGY

CATIR FEC

Large bandgap reduced graphene oxide (rGO) based n-p(+) heterojunction photodetector with improved NIR performance

SEMICONDUCTOR SCIENCE TECHNOLOGY

SINGH M, KUMAR G, PRAKASH N, KHANNA SP, PAL P, SINGH SP

Flexible thermoelectric nanogenerator based on the MoS2/graphene nanocomposite and its application for a self-powered temperature sensor

SEMICONDUCTOR SCIENCE TECHNOLOGY

XIE YN, CHOU TM, YANG WF, HE MH, ZHAO YR, LI N, LIN ZH