| 国家/地区 | Russia(2) |
| 关键词 | |
| 出版物 |
SEMICONDUCTORS(2)
|
| 出版时间 | |
| 机构 |
IOFFE INST(2)
|
| 作者 |
GANICHEV SD(2)
|
SEMICONDUCTORS
VASILIEV YB, NOVIKOV SN, DANILOV SN, GANICHEV SD
On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation
SEMICONDUCTORS
VASILEVA GY, VASILYEV YB, NOVIKOV SN, DANILOV SN, GANICHEV SD
