国家/地区 France（2） Germany（2）
关键词 TRANSISTOR（6）
出版物 SOLIDSTATE ELECTRONICS（6）
出版时间 2012（3） 2015（2）
机构 UNIV SIEGEN（2）
作者 LEMME MC（2） OSTLING M（2） SMITH AD（2） VAZIRI S（2）

A manufacturable process integration approach for graphene devices

SOLIDSTATE ELECTRONICS

VAZIRI S, LUPINA G, PAUSSA A, SMITH AD, HENKEL C, LIPPERT G, DABROWSKI J, MEHR W, OSTLING M, LEMME MC

Extending ballistic graphene FET lumped element models to diffusive devices

SOLIDSTATE ELECTRONICS

VINCENZI G, DELIGEORGIS G, COCCETTI F, DRAGOMAN M, PIERANTONI L, MENCARELLI D, PLANA R

Electrical compact modelling of graphene transistors

SOLIDSTATE ELECTRONICS

FREGONESE S, MENG N, NGUYEN HN, MAJEK C, MANEUX C, HAPPY H, ZIMMER T

A physics-based, small-signal model for graphene field effect transistors

SOLIDSTATE ELECTRONICS

CHAMPLAIN JG

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

SOLIDSTATE ELECTRONICS

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Large scale integration of graphene transistors for potential applications in the back end of the line

SOLIDSTATE ELECTRONICS

SMITH AD, VAZIRI S, RODRIGUEZ S, OSTLING M, LEMME MC