国家/地区 美国（6）
IPC部 B（6）
IPC大类 B01（6） C01（6） H01（5）
B82（4） C23（2）
IPC小类 B01J（6）
IPC B01J019/12（6）
发明人 FISHER T S（2）
公开年 2012（3） 2013（3）
申请年 2012（6）
专利权人 FISHER T S（2） PURDUE RES F.（2）

Material useful to provide refrigeration, and for photovoltaic or thermionic power generation, comprises carbon allotrope (graphene or graphite) doped with boron nitride, and an alkali metal (potassium) intercalated within carbon allotrope.

FISHER T, FISHER T S

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S

Producing graphene sheet or ribbon involves attaching metal to carbon nanotube; treating metal to bond chemically to nanotube; removing metal from nanotube; unzipping nanotube into graphene sheet or ribbon, useful for making supercapacitors.

CHEN W, CUI X

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Manufacture of graphene used as transparent electrode, involves coating organic substance on metal substrate and performing hydrogen plasma treatment using microwave plasma treatment device under reduced pressure.

YAMADA TAKATOSHI, KIM JAEHO, ISHIHARA MASATOU, KOGA YOSHINORI, HASEGAWA MASATAKA, IIJIMA SUMIO, YAMADA T, KIM J, ISHIHARA M, KOGA Y, HASEGAWA M, IIJIMA S, HO K J, YOSHINORI K, SUMIO I, TAKATOSHI Y, JAEHO K, MASATOU I, MASATAKA H