国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3） C23（2）
IPC小类 C30B（3）
IPC C23C016/26（2） C23C016/54（2） C30B025/02（2）
C30B029/02（2）
发明人 ZHANG Y（3）
公开年 2017（2）
申请年 2017（3）
专利权人 CHONGQING GR.（2）

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.

YU W, JIN P, ZHANG Y, WANG Z

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y