国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年 2012（2）
申请年 2012（2） 
专利权人 UNIV CHINA ELECTRONIC SCI TECHNOLOGY（2）

System used in preparing graphene by silicon carbide thermal cracking method, comprises silicon carbide substrate at center of vacuum cavity, induction heating graphite boat, carbon felt insulating layer, hydrogen bypass, and argon bypass.

CHEN Y, HAO X, LI P, LI Y, LIU J, WANG Z, ZHANG W

Preparation of graphene involves mixing natural flake graphite and oxidant, heating resulting mixture, adding hydrogen peroxide, separating layers, adding alkaline solution to obtained colloidal suspension of graphene oxide.

CHEN J, FENG Z, LIN R, WANG Y, ZHANG C