国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 ZETTL A K（2）
公开年
申请年
专利权人 WANG F（2）

Method for locally doping e.g. graphene, involves removing voltage between two-dimensional material and substrate, where density of portion of two-dimensional material proximate probe is compared to density of remainder of material.

WONG D, VELASCO J, JU L, KAHN S, LEE J, GERMANY C E, ZETTL A K, WANG F, CROMMIE M F

Graphene device e.g. dual gate graphene FET has bilayer graphene which is coupled to two gate structures and located partially between two gate structures.

WANG F, ZHANG Y, TANG T, CROMMIE M F, ZETTL A K, GIRIT C