国家/地区 美国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 MA S（2）
公开年
申请年
专利权人

Semiconductor device, such as vertical thin film transistor (TFT) for computing device, comprises transistor including gate electrode above substrate, channel layer that is provided with channel area with thickness that is larger than thickness of contact area of channel layer.

MA S, LE VAN H, WEBER C, SHARMA A

Sealant comprises sealing gum body, the sealant further includes graphene oxide, where the sealing gum body comprises epoxy acrylate resin, acrylic, heat curing agent, photoinitiators, organic fillers and coupling agent.

LI W, LIANG D, MA L, MA S, WU X, WANG K, ZHENG Q, YUAN H, ZHANG Z, PENG X, YOU Y, CHEN H, BI Y, ZHOU K