国家/地区 美国（2）
IPC部 G（2） H（2）
IPC大类 G01（2） H01（2）
IPC小类 G01N（2） H01L（2）
IPC
发明人 ZETTL A K（2）
公开年 2011（2）
申请年 2010（2） 
专利权人

Graphene device has electrodes which are electrically coupled to graphene layer and dopant island that is coupled to exposed surface of graphene layer between electrodes.

BOUCHIAT V, GIRIT C, KESSLER B, ZETTL A K

Graphene device e.g. dual gate graphene FET has bilayer graphene which is coupled to two gate structures and located partially between two gate structures.

WANG F, ZHANG Y, TANG T, CROMMIE M F, ZETTL A K, GIRIT C