国家/地区 美国（7）
IPC部 B（7）
IPC大类 B01（7） H01（7） C01（6）
B82（5） B05（3） C23（3）
B32（2）
IPC小类 B01J（7）
IPC B01J019/08（7）
发明人
公开年 2012（3） 2013（3）
申请年 2011（3）  2012（3） 
专利权人

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Metal powder for use as inner electrode of multilayered ceramic capacitor, comprises graphene layer, which is irregularly formed on surface of metal powder.

KIM W C, LIM H H, WI S K, LEE K S, WOON C K, HYUN H L, SUNG K W, IVY L

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Controlling number of graphene layers to form mono/bilayer graphene, used e.g. in sensor, comprises forming graphene on first surface of first substrate, forming second substrate on second surface of first substrate and irradiating graphene.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J