国家/地区 中国（13） 美国（6） 日本（4） 韩国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 台湾（2）
IPC部 C（16）
IPC大类 C23（16） C01（9） C25（4）
H01（4） B82（3） B08（2）
B32（2） C04（2） C30（2）
IPC小类 C23C（16） C01B（9） B08B（2）
B32B（2） B82B（2） B82Y（2）
C04B（2） C25D（2） C25F（2）
C30B（2） H01G（2） H01L（2）
IPC C23C016/02（16）
发明人 ZHANG X（3） CHEN L（2） DENG K（2）
JIN H（2） LIU Z（2） PENG P（2）
QI X（2） YANG H（2） ZHANG W（2）
ZHANG Z（2）
公开年 2015（16）
申请年 2014（10）  2015（4）  2013（2） 
专利权人 CHANGZHOU 2D.（2）

Producing graphene-copper composite thin layer, comprises producing a copper oxide layer on metal substrate by electroplating, producing a hydrophobic layer of copper by reducing copper oxide layer, and producing graphene thin film.

KIM G, OH I K

Preparation of biomimetic superhydrophobic graphene film involves soaking copper foil substrate in hydrochloric acid solution, annealing, growing graphene film, coating poly(methyl methacrylate), and covering aluminum alloy with film.

HAN Z, LI S, LIU Y, REN L, ZHENG Z, BAI Y

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

Growing graphene thin film on copper foil involves subjecting copper foil to plasma cleaning, de-contaminating copper foil, removing oxidation layer from copper foil, electrochemically polishing copper foil.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Preparing graphene catalyst based copper nano wires used for manufacturing semiconductor devices, involves carrying out flattening process of high-purity aluminum sheet and oxidizing aluminum sheet.

HAO Y, LU X, WANG D, ZHANG J

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Plasma enhanced chemical vapor deposition of multi-layer graphene thin film comprises taking silicon carbide, depositing on glass substrate nanofilm, sputtering, heating and chemical vapor depositing.

GUO Z