国家/地区 中国（2）
IPC部 B（2）
IPC大类 B22（2） H01（2）
IPC小类 B22D（2）
IPC
发明人 WANG X（2）
公开年
申请年 2022（2）
专利权人

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Preparation method of graphene copper composite material used in e.g. modern electronic information industry field, involves continuously casting mixture of copper powder and graphene in vacuum condition.

WANG E, WANG Y, HU X, ZHANG R, WANG X, LIU K, FU Y