国家/地区 中国（3） 欧洲专利局（EPO）（2） 美国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C30（4） C01（2） C23（2）
IPC小类 C30B（4）
IPC C30B025/02（4）
发明人
公开年 2012（2）
申请年 2011（4）
专利权人

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H

Making high-quality graphene involves processing graphene substrate by reducing defect, placing precursor on substrate by transferring graphene sheet, precipitating/growing graphene with carbon tube and growing precursor into graphene strip.

GUO W, YIN J, ZHOU J

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O