国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B007/10（2） C30B029/02（2）
发明人 REN H（4）
公开年 2016（3）
申请年 2016（3） 
专利权人 UNIV SHAANXI.（3）

Preparing reduced graphene oxide-bismuth vanadate crystal with adsorption property comprises e.g. dissolving bismuth(iii) nitrate pentahydrate in dilute nitric acid and stirring, adding oleic acid, n-heptane and acetone, stirring and drying.

TAN G, XIA A, ZHAO C, REN H

Preparing monoclinic phase bismuth vanadate/graphene oxide (GO)/RGO crystal comprises e.g. dissolving bismuth(III) nitrate pentahydrate in dilute nitric acid, then adding oleic acid, n-heptane, ultrasonic dispersing and post processing.

TAN G, XIA A, ZHAO C, REN H

Preparing bismuth/reduced graphene oxide crystal comprises e.g. dissolving bismuth (III) nitrate pentahydrate in nitric acid, stirring, adding oleic acid, n-heptane and acetone, sodium hydroxide solution and forming precursor solution.

TAN G, XIA A, ZHAO C, REN H

Preparing large single crystals of graphene involves annealing copper substrate in low reducing atmosphere to obtain copper substrate and then treating copper substrate with triazine derivative in steam atmosphere.

LIN L, LIU Z, PENG H, REN H